Silicon Carbide CoolSiC™ MOSFETs from Infineon provide high efficiency and optimal reliability. Our range of products is available in discrete housing as well as modules in 650 V, 1200 V, 1700 V and 2000 V voltage classes.

Our unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products from 400 V up to 2000 V are ideally suited for hard- and resonant-switching topologies such as LLC and ZVS, and can be driven like an IGBT or CoolMOS™, using standard drivers.

Learn more about our Silicon Carbide (SiC) CoolSiC™ MOSFET Module Solutions - Easy 1B, Easy 2B,62 mm or HybridPACK™ Drive Housings

Explore how the new CoolSiC™ MOSFET G2 enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC/DC, DC/DC and DC/AC.

Silicon Carbide trench based MOSFETs are the next step towards and energy-efficient world – representing a dramatic improvement in power conversion systems. Read all about how Infineon controls and assures the reliability of SiC based power semiconductors during the release process to achieve the desired lifetime and quality requirements.

With the innovative OptiMOS™ and StrongIRFET™ low- and medium-voltage power MOSFETs, as well as the revolutionary CoolMOS™ superjunction MOSFET families, Infineon is setting new standards in the industry. CoolSiC™ silicon carbide MOSFET families represent the best performance, reliability, and ease of use for converter designers.

This article summarizes selected features of the new ColSiC™ MOSFET. The device combines low static and dynamic losses with high Si-IGBT like gate oxide reliability right fitting to typical industrial requirements.

The CoolSiC™ MOSFET 650 V M1 trench power device is Infineon’s first generation of SiC trench MOSFETs. It is designed to address the needs of power supplies in the range from several hundred watts to tens of kilowatts,

The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density.

We continuously add SiC-based products - including the revolutionary CoolSiC™ MOSFETs in trench technology - to the already existing Si-assortment. Today the company offers one of the most comprehensive power portfolios in the industry – ranging from ultra …