2023年2月1日 · This paper introduces the internal and external structure of SiC MOSFET in detail and analyzes the basic working principle of SiC MOSFET and the electrical characteristics of each stage...

2017年8月10日 · This handbook explains the physical properties and advantages of SiC, the differences in characteristics and usage of SiC Schottky barrier diodes and SiC MOSFETs with a comparison to Si devices, and includes a description of full SiC modules with various advantages.

Mitsubishi Electric has developed trench SiC-MOSFETs with a unique structure that enables lower resistance, higher reliability and lower switching losses(1)(2)(3). The schematic of the trench SiC-MOSFET developed by Mitsubishi Electric is shown in Fig. 1.

This handbook explains the physical properties and advantages of SiC, the differences in characteristics and usage of SiC Schottky barrier diodes and SiC MOSFETs with a comparison to Si devices, and includes a description of full SiC modules with various advantages.

SiC MOSFETs have much lower switching loss than IGBTs, which enables higher switching frequency, smaller passives, smaller and less expensive cooling system. Compared to 600V-900V silicon MOSFETs, SiC MOSFETs have smaller chip area (mountable on a compact package) and an ultralow recovery loss .

Figure 4: Sketch of the CoolSiC™ MOSFET cell structure The CoolSiC™ MOSFET cell design was developed to limit the electric field in the gate oxide in on-state as well as in off-state (see figure 4).

2023年2月1日 · This paper introduces the internal and external structure of SiC MOSFET in detail and analyzes the basic working principle of SiC MOSFET and the electrical characteristics of each stage in the conductive process.

We have been developing second-generation planar metal-oxide-semiconductor field effect transistors (MOSFETs) using our newly constructed 6-inch SiC wafer line. For these planar MOSFETs, the MOS cell structure was optimized using JFET doping technology, which has reduced the on-resistance and capacitance.

Avalanche is the cause of breakdown in power diodes and in MOSFETs and some IGBTs. To calculate the Breakdown Voltage (VBD): For Reverse Breakdown, the metal of a Schottky diode can be regarded as a source of holes, the same as the P+ region in a PiN diode.

MOSFET structure is determined by the drift region doping concentration and thickness. However, to fully utilize the high breakdown electric field strength available in silicon carbide, it is necessary to screen the gate oxide from the high field within the semiconductor. In the shielded planar MOSFET structure, this is