IQE, a maker of compound semiconductor wafer products, and the analogue/mixed signal foundry X-FAB have announced a Joint Development Agreement (JDA) to create a European-based GaN Power device ...

Most recently owned by US company Coherent, the UK fab was bought by the MoD as a crucial supply chain to UK defence. The ...

The new 3.3kV/1500A XB Series HVIGBT module uses IGBT elements incorporating Mitsubishi's proprietary relaxed field of ...

STMicroelectronics and Innoscience have signed an agreement on GaN technology development and manufacturing. The joint ...

Ron Huemoeller, CEO of Saras Micro Devices is bringing its expertise in power delivery solutions to two high-impact semiconductor research projects, each awarded $100 million under the U.

Are we at a tipping point? 48V technology is a key enabler for advanced automotive features such as electric turbocharging, ...

The pursuit of accurate temperature characterisation in GaN HEMTs confronts fundamental limitations of existing methodologies ...

The investment will fund the launch of a patented power semiconductor technology called mSJMOS, which integrates silicon MEMS ...

The pursuit of accurate temperature characterisation in GaN HEMTs confronts fundamental limitations of existing methodologies ...

Wayne Rickard, Terecircuits CEO, outlines the company’s decision to join the US’s National Semiconductor Technology Center, ...

The DC-DC converter is powered by Navitas’ GaNSense NV6169. The 650V, 45 mΩ, is claimed to deliver 50 percent more power than ...

SemiQ is supplying its GCMX003A120S3B1-N and the GCMX003A120S7B1 QSiC 1200 V SiC half-bridge modules for use in 100 Kw ...