Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

A current gain dynamic range of 513 (54.2 dB), a gain-bandwidth product of 1.78 GHz at the largest current gain of 35.9 dB, and a maximum power consumption of 250 μW with a single supply voltage of ...

Explore next-gen transistor, from InGaOx GAA structures to Intel’s RibbonFET, unlocking higher density, efficiency, and performance.

Brian Wilson, the Beach Boys’ visionary and fragile leader whose genius for melody, arrangements and wide-eyed ...