They used two different configurations of silicon-oxynitride diffusion-barrier layers. “For the formation of CZTSe absorber, a metallic precursor with a structure of zinc/copper-tin/zinc (Zn/Cu ...

Hsinchu, Taiwan, R.O.C. –June 17, 2009 – Taiwan Semiconductor Manufacturing Company (TWSE: 2330, NYSE: TSM) today announced it has successfully developed the first 28-nanometer (nm) low power ...

Researchers from the Institute of Science Tokyo opened the door for sustainable chemical innovation by revealing Ba-Si orthosilicate oxynitride-hydride as a catalyst that is free of transition metals.