They used two different configurations of silicon-oxynitride diffusion-barrier layers. “For the formation of CZTSe absorber, a metallic precursor with a structure of zinc/copper-tin/zinc (Zn/Cu ...
low power technology that continues the scaling trend and extends Silicon Oxynitride (SiON)/poly usage beyond 32 nanometer with a dual/triple gate oxide process. Other characteristics from this ...
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