Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...

Imec has announced a significant breakthrough in mobile RF transistor performance with a GaN-on-silicon enhancement-mode ...

Due to their outstanding material properties, GaN-based devices offer superior performance over CMOS devices and gallium-arsenide (GaAs ... but SiC substrates are expensive and small in size. The ...

Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...

China regards silicon carbide (SiC) and gallium nitride (GaN) as so-called "third-generation semiconductors," a terminology underscoring China's hope that SiC/GaN development can mend the ...

Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved ... what is achievable by any discrete GaN or discrete silicon device. Navitas will participate ...

As GaN and SiC power technologies deliver faster ... achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy silicon power devices. Navitas ...

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(Nasdaq: NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, today announced its adoption of both technologies into ...

Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, will be exhibiting ...

TORRANCE, Calif., Feb. 05, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power ...