Abstract: This paper describes state-of-the-art STT-MRAM, which can drastically save energy consumption dissipated in cache memory system compared with conventional SRAM-based ones. This paper also ...

嵌入式人工智能和智能边缘设备的兴起进一步加速了这一趋势。边缘计算系统越来越被期望能够在本地处理数据、降低通信延迟并做出实时决策。这些系统需要快速、节能且非易失性的内存。传统的嵌入式内存解决方案往往在一个或多个方面存在不足。MRAM 和 ReRAM ...

The spintronics market is projected to reach USD 98.65 billion by 2035, driven by MRAM use and advances in spin-based ...

近年来，磁随机存储器（MRAM）因其优异性能获得工业界和学术界的高度关注。但受制于物理尺寸难以微缩到DRAM/NAND级别、写入速度无法达到SRAM（小于1纳秒，即十亿分之一秒）级别等关键技术瓶颈，MRAM在主流存储器市场上处于容量无法匹配DRAM/ ...

In particular, spin-orbit-torque magnetoresistive random access memory (SOT-MRAM) holds the potential to outright replace SRAM. However, SOT-MRAM needs some fine-tuning before we can officially make ...

Abstract: We experimentally investigate the writing reliability of STT-MRAM in the presence of magnetic fields oriented at different angles. It is established that ...

Where do MRAM and ReRAM technologies stand after years of promise to replace incumbent memories? Gary Hilson speaks to MRAM and ReRAM makers as well as an industry analyst to find the truth about ...

The increasing adoption of spintronic-based devices, such as magnetoresistive random-access memory (MRAM), spin-transfer torque (STT) devices, and spin-based logic circuits, is fueling this rapid ...