Abstract: In Silicon Carbide based voltage source converters (VSCs), pairing Schottky barrier diodes (SBDs) presents trade-offs ... A three-phase VSC with 1.2 kV MOSFETs and four sets of 1.2 kV SBDs ...

NoMIS claims significant reductions in on-resistance for its 1.2-kV planar SiC MOSFETs, supporting higher-frequency switching. NoMIS Power Corp. has claimed significant reductions in on-resistance for ...

Housed in the 14×18.5-mm HV-T2Pak, the initial portfolio includes 1200-V devices with on-resistance from 18 mΩ to 135 mΩ and 650-V devices ranging from 20 mΩ to 55 mΩ. Lower on-resistance (<15 mΩ) SiC ...

SemiQ showcases its latest Gen3 SiC MOSFET series, targeting industrial supplies, EV charging, motor drives, and solar inverters, at PCIM 2025. SemiQ Inc. has expanded its Gen3 SiC MOSFET family with ...

Looking to make it easier to drop silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) into legacy systems and to enable the next generation of power converter ...

Navitas’ latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2Pak top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to ...

The authors created a bipolar, high-frequency GaN HEMT-based resonant drive for a SiC MOSFET power device. A negative gate off-state drive is recommended by some SiC manufacturers. This can reduce the ...

Abstract: Most of the present models of silicon carbide (SiC) Schottky diodes are not suitable for evaluating their performance from a system level. The models presented in this paper are specialized ...