Abstract: Silicon carbide power MOSFETs are under development to replace silicon IGBTs for high-efficiency power conversion applications. Commercial SiC power MOSFETs have a short-circuit (SC) ...

Abstract: High-voltage Schottky barrier diodes have been successfully fabricated for the first time on p-type 4H- and 6H-SiC using Ti as the barrier metal. Good rectification was confirmed at ...