This article presents an analytical model that captures the turn-off switching dynamics of SiC mosfet and SiC Schottky barrier diode (SBD) pair using parameters obtained from device and gate driver ...

Abstract: A detailed model to study turn on switching dynamics of SiC MOSFET and SiC schottky diode (SBD) pair is presented. This study takes the non-linear effect of channel current along with the ...

SemiQ showcases its latest Gen3 SiC MOSFET series, targeting industrial supplies, EV charging, motor drives, and solar inverters, at PCIM 2025. SemiQ Inc. has expanded its Gen3 SiC MOSFET family with ...

Housed in the 14×18.5-mm HV-T2Pak, the initial portfolio includes 1200-V devices with on-resistance from 18 mΩ to 135 mΩ and 650-V devices ranging from 20 mΩ to 55 mΩ. Lower on-resistance (<15 mΩ) SiC ...

Looking to make it easier to drop silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) into legacy systems and to enable the next generation of power converter ...

Navitas’ latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2Pak top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to ...

The authors created a bipolar, high-frequency GaN HEMT-based resonant drive for a SiC MOSFET power device. A negative gate off-state drive is recommended by some SiC manufacturers. This can reduce the ...

SemiQ has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series. Gen3 SiC MOSFET offering with 1200 V TSPAK series Credit: SemiQ The four-strong series of ...

Toshiba has introduced a set of industrial-grade 650V SiC mosfets in 8 x 8mm DFN packaging. Of the four new devices, the company picks TW054V65C as its poster child for low turn-on and turn-off losses ...