SiC MOSFET是近年来MOSFET行业进行技术迭代的主要方向，相较于其他可用技术，碳化硅MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)表现出显著的性能提升，为众多电子应用带来了新的可能性。目前，SiC MOSFET的发展主要经历了三个阶段，其发展历程具体如下 ...

Toshiba has developed a SiC MOSFET that arranges embedded Schottky barrier diodes in a check pattern to achieve both low on-resistance and high reliability. The company reports that the design reduces ...

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two ...

Diodes has expanded its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Diodes unveils new SiC Schottky diodes ...

The high-performance SiC diodes are also notable for their lowest reverse leakage (I R) in the industry, at 20µA (max.). This minimizes heat dissipation and conduction losses, improving system ...

Diodes has released its first silicon carbide (SiC) Schottky barrier diodes, including 11 devices rated at 650 V and 8 devices rated at 1200 V. The 650-V DSCxxA065 series provides current ratings of 4 ...