Transistors based on ions, as opposed to electrons, offer the promise of bridging the gap between technological and biological systems. Tybrandtet al. present logic gates based on ion bipolar ...

Pro Chinese researchers develop silicon-free transistor technology, claimed to be fastest and most efficient ever - here's what we know Pro Kioxia confirms its next gen 332-layer NAND chip is ...

Along the road, several technology innovations have been introduced to maintain this trendline. Until recently, NAND flash memory cells were arranged in a planar configuration, using floating gate ...

Demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues. NAND and NOR LIM composed of silicon nanowire (SiNW) feedback field-effect transistors ...

To read data from a NAND Flash memory cell, a voltage is applied to the control gate. If electrons are present on the floating gate, the transistor will not conduct current, indicating a "0" state. If ...

Traditional NAND flash records zeros and ones by storing charge in a set of floating gate transistors, with the presence or absence of charge corresponding to a 0 or a 1 in single-level cell NAND ...

IM Flash Technologies LLC, the joint venture between Intel and Micron Technologies, is considering how and when to take its NAND flash memory ICs into the third dimension but reckons its development ...

Basic model of a floating-gate transistor. At the core of NAND Flash lies the concept of floating gates, as first pioneered in the 1960s with the floating-gate MOSFET ( FGMOS ).

Arrays of these 3D NAND gates showed outstanding consistency, with voltage gains up to 33.9 V/V - significantly higher than other printed organic circuits. Interconnecting multiple 3D NAND gates, the ...