1 College of Mathematics and Computer, Jilin Normal University, Siping, China. 2 College of Physics, Jilin Normal University, Siping, China. 3 Institute of Thought and Culture, Jilin Normal University ...

Boolean Expression,Circuit Design,Conductive Filaments,Electrode,Graphene Nanoribbons,Half Adder,I-V Curves,Logic State,NAND Gate,NOR Gate,Resistance State,Resistive ...

Abstract: A new monolithic integrated power device, the MOS-gate transistor (MGT), which consists of a bipolar transistor for an output stage and two MOSFET's for a driver stage, has been investigated ...

SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-Si, Gyeonggi-do 16419, Republic of Korea ...

Flash memory cells add a second (or 'floating') gate to the standard MOSFET transistor geometry ... Figure 1: Cross-point phase-change memory and 3D NAND flash are competing to provide viable ...

Pull requests help you collaborate on code with other people. As pull requests are created, they’ll appear here in a searchable and filterable list. To get started, you should create a pull request.

Lam Research Corporation LRCX is putting a major focus on two key technologies — atomic layer deposition (ALD) and dry EUV ...

Axcelis leverages ion implantation expertise to thrive in the semiconductor sector. Read more about ACLS stock's 65% upside ...

These polarity-configurable thin-film transistors (PC-TFTs) enable flexible, adaptive CMOS circuits suitable for wearables, ...

Find more information on the Altmetric Attention Score and how the score is calculated. We present a nanomechanical device, operating as a reprogrammable logic gate, and performing fundamental logic ...

本周，2025 年 IEEE VLSI 研讨会在日本东京举行，会议上 SK 海力士提出了未来 30 年的新 DRAM 技术路线图。 至于 10nm DRAM 如何成为制程技术的难点？未来 30 年 DRAM 市场为什么依赖 3D？4F2 ...