The integrated load switch of Figure 4, from schematic standpoint and therefore basic-function standpoint, is essentially the same as the discrete load switch. The main switch is a P-channel planar ...

The discrete MOSFET world started with planar devices. The devices are made entirely on a planar process (Fig. 1) with diffused P and N wells, oxide grown on the surface, and surface metallization ...

TRINAMIC Motion Control has launched a line of discrete MOSFET integrated circuits specifically designed to complement the company 's motor drive pre-driver ICs. The new full- and half-bridge MOSFET ...

VISHAY INTERTECHNOLOGY, Inc. introduced the first asymmetric dual TrenchFET power MOSFET in the PowerPAIR 6 mm by 3.7 mm package to utilize TrenchFET ...

Branded L-TOGL and measuring 9.9 x 11.8 x 2.3mm (right), the AEC-Q101-capable package is designed for up to 175°C, 100V, 400A, 750W, with minimum mosfet device Rds(on) around 300μΩ.This compares with ...

DUBLIN, Feb. 7, 2018 /PRNewswire/ --The 'Industrial 100V MOSFET Technology and Cost Review' report has been added to ResearchAndMarkets.com's offe ...

Electrostatic discharge (ESD) is caused by the discharge of an excess or deficiency of electrons on one surface with respect to another surface or to ground. When a static charge is present on an ...