Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

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Infineon Technologies has formed a new business unit out of its Sensor and Radio Frequency (RF) operations. The SURF (Sensor Units & Radio Frequency) business is part of the Power & Sensor Systems ...

German semiconductor maker Infineon Technologies is developing its first factory in Thailand to serve growing demand in the electric vehicle and data centre industries as well as businesses that ...

For this reason, various integrated device manufacturers (IDMs) and fabless manufacturers are adopting SiC and GaN devices for product development. They are engaging with customers across ...

For this reason, various integrated device manufacturers (IDMs) and fabless manufacturers are adopting SiC and GaN devices for product development. They are engaging with customers across verticals ...

This advantage increases as the switching frequency is increased, with estimates of a 2.2% improvement for a 1200 V SiC MOSFET based inverter over IGBTs for a 25kW application at a switching frequency ...

In this EV transportation ecosystem, silicon (Si) based devices will be installed for fast DC charging stations, and high-voltage silicon carbide (SiC) MOSFETs will be installed for MCS installations ...

作为一种变通方法，可以使用包括串联低电压硅MOSFET的共源共栅配置来实现常闭器件。串联硅器件的加入增加了复杂度，进而削弱了JFET在高电流应用中的一些优势。SiC MOSFET属于常闭器件，兼具许多系统中所需的低电阻和可控性。K88ednc 热封装 SiC功率模块可实现 ...

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