Derivative equations on heat transfer and discretization (Source: Plexim GmbH) Foster networks abstract the thermal path into a transfer function between input heat flow and output temperature. Unlike ...

Silicon-carbide-based, or SiC-based, semis, used to handle higher voltages and improve the range and efficiency of EVs, are a particularly attractive opportunity for Infineon but also for its rivals.

This advantage increases as the switching frequency is increased, with estimates of a 2.2% improvement for a 1200 V SiC MOSFET based inverter over IGBTs for a 25kW application at a switching frequency ...

作为一种变通方法，可以使用包括串联低电压硅MOSFET的共源共栅配置来实现常闭器件。串联硅器件的加入增加了复杂度，进而削弱了JFET在高电流应用中的一些优势。SiC MOSFET属于常闭器件，兼具许多系统中所需的低电阻和可控性。K88ednc 热封装 SiC功率模块可实现 ...

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Littelfuse公司30日宣布推出TPSMB非对称TVS二极管系列，这是首款上市的非对称瞬态电压抑制（TVS）二极管，专门用于保护汽车应用中的碳化硅（SiC）MOSFET栅极驱动器。这一创新产品满足下一代电动汽车(EV)系统对可靠过压保护日益增长的需求，提供一种结构紧凑的 ...

This brings us to the differences between measuring for SiC trench MOSFETs and SiC IGBT. In the SiC trench MOSFET process ... Both types of measurements are important for power device manufacturing.