and better thermal performance across various applications. With over twenty years of expertise in silicon carbide development, Infineon adopted a trench-based design to capitalize on the low RDS(on) ...

which mainly comprises of the high switching performance SiC diode (FFSP3065A), SiC mosfet (NVHL020N090SC1), 6A SiC mosfet driver (NCP51705MNTXG), 900V 60mΩ SiC mosfet (NVHL060N090SC1). With these ...

* Models provided by INFINEON are not warranted by INFINEON as * ...

has introduced a new family of 1700 V SiC MOSFETs designed to enhance medium-voltage ... offering a power dissipation of 652 W and the half-bridge module providing up to 2113 W of dissipation, ...

SiC MOSFET: Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor, a type of transistor that offers high efficiency and thermal performance. Current Sharing: The distribution of ...

Abstract: Series-connection of silicon carbide (SiC)-MOSFETs has significant advantages in simplifying the topology and control of high-voltage converters. However, the challenges of high isolation ...

New SiC platform supports long-term roadmaps for high-performance, application-optimised products Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to ...