Abstract: A unified approach to RF and microwave noise parameter modeling in bipolar transistors is presented. Circuit level noise parameters including the minimum noise figure, the optimum generator ...

Integrated circuits have evolved from simple microchips to complex, nanoscale marvels, driving advances in computing, ...

Although RE life test is a more definitive technique for RE FET reliability estimation, DC life test is often preferred over RE life test due to its simplicity. In this work, we study how degradation ...

Silicon photonics is rewiring the future of data centers. But engineers need more advanced simulation tools to integrate ...

Understand how to use and apply data measured with RF test and measurement equipment including network analysers and spectrum analysers; ... Transistor circuits and automatic gain control Dr Tim Brown ...

Infineon Technologies AG has launched the first of a new family of radiation-hardened (rad-hard) gallium nitride (GaN) transistors, based on its CoolGan technology.Complementing the company’s rad-hard ...

Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are now central to high-power, high-frequency RF systems used in aerospace, communications and advanced energy systems. Engineers value ...