Although RE life test is a more definitive technique for RE FET reliability estimation, DC life test is often preferred over RE life test due to its simplicity. In this work, we study how degradation ...

Abstract: A unified approach to RF and microwave noise parameter modeling in bipolar transistors is presented. Circuit level noise parameters including the minimum noise figure, the optimum generator ...

Integrated circuits have evolved from simple microchips to complex, nanoscale marvels, driving advances in computing, ...

Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are now central to high-power, high-frequency RF systems used in aerospace, communications and advanced energy systems. Engineers value ...

Silicon photonics is rewiring the future of data centers. But engineers need more advanced simulation tools to integrate ...

AI requires a lot of data, particularly for training models. The problem is that planar chips are unable to process all that ...

Infineon Technologies AG has launched the first of a new family of radiation-hardened (rad-hard) gallium nitride (GaN) transistors, based on its CoolGan technology.Complementing the company’s rad-hard ...

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Werlatone, Inc. is inviting visitors to the 2025 IEEE Microwave Theory & Techniques Society (MTT-S) International Microwave Symposium (IMS) to celebrate its 60th year in the RF/microwave industry.

Pickering shares five expert-backed reasons reed relays outperform in wafer probe and parametric test environments ...