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IC, AI global ranking; China's fully automated IC design system; Micron goes bigger; PCIe 7.0 spec; TSMC-Tokyo joint lab; ...

"In-Depth Analysis of the Market for Semiconductor Devices for High-Temperature Applications: Highlighting Segmentation by Material, Device Type, Operating Temperature, and Industry, Offering ...

The GaN transistors are fabricated at Infineon’s foundry. “It is important to note that Infineon owns the fab in Europe that manufactures the radiation-hardened wafers, and we are not dependent on ...

Infineon is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening ...

Keying in on the in-house manufacturing of the device, Darcy added, “It is important to note that Infineon owns the fab in Europe that manufactures the radiation wafers, and we are not dependent on ...

Infineon has also revealed what it called the world’s first 300-mm power wafer based on GaN. “The new ultra-thin wafer technology drives our ambition to power different AI server ...

This comes just a few months after Infineon announced it had successfully developed a 300 mm GaN wafer in September. The wafer only has a 20-micrometer thickness and 300 mm in diameter, about a ...

After announcing the world’s first 300-millimeter gallium nitride (GaN) power wafer and opening the world’s largest 200-millimeter silicon carbide (SiC) power fab in Kulim, Malaysia, Infineon ...

Infineon’s strategy of renewing the power electronics market on both fronts, from silicon to wide bandgap, by taking full advantage of the potential of global decarbonization and digitization trends ...

The announcement comes less than two months after the German chipmaker announced it had successfully developed the world’s first 300mm power gallium nitride (GaN) wafers.. In a statement, Infineon ...