Infineon Technologies AG has launched the first of a new family of radiation-hardened (rad-hard) gallium nitride (GaN) transistors, based on its CoolGan technology.Complementing the company’s rad-hard ...

The new GaN-based transistors can be used in combination with traditional silicon MOSFET technology. Josemari Mapa, senior product marketing engineer at Infineon, said that while silicon and gallium ...

Infineon is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening ...

Infineon has rolled out its first in-house radiation-hardened gallium nitride transistor, flogging it as ideal for deep space, defence, Slough, and other hellish environments. Built using its own ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based on its CoolGan technology. ... Fraunhofer team makes InP-on-GaAs wafers up ...

Fabricated at Infineon’s own foundry, these transistors have been designed to operate in harsh space environments and is the first in-house manufactured GaN transistor to earn the highest quality ...

Over the past decade, advancements in material quality, manufacturing processes, wafer size, and device architecture have accelerated the adoption of SiC and GaN, ushering in a new era of ...

Infineon Technologies AG has unveiled the first in a new line of radiation-hardened Gallium Nitride (GaN) transistors, produced entirely in-house at its foundry and built on its established CoolGaN™ ...

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its CoolGaN technology. The company said the in-house manufactured transistors ...

Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...