Infineon has developed 300mm power GaN wafers which deliver 2.3x more ICs per wafer than 200mm. “This remarkable success is the result of our innovative strength and the dedicated work of our global ...

Infineon has succeeded in manufacturing 300 mm GaN wafers on a pilot line in its power fab in Villach (Austria). The company will further scale GaN capacity aligned with market needs. 300 mm GaN ...

The market for GaN-based power semiconductors is also expected to get a boost from the breakthrough technology. Infineon maintains that the chip production on 300 mm wafers is technologically more ...

Infineon Technologies (OTCQX:IFNNY) on Wednesday said it is looking to grab a share of the growing gallium nitride (GaN) market with the development of a new technology, that could help in ...

Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) today announced that the company has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology. Infineon is ...

Infineon has introduced 300-mm power GaN wafer technology within a scalable, high-volume manufacturing environment. The company notes that 300-mm wafers offer significant technological and efficiency ...

Infineon has announced a groundbreaking development in power semiconductor technology with the introduction of the world’s first 300 mm power gallium nitride (GaN) wafer technology.

For Infineon, this is a fast-growing business opportunity. With mid-double-digit growth rates, we expect our AI business to reach one billion euros within the next two years.” Infineon will present ...

Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) today announced that the company has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology.

TAIPEI -- Leading European chipmaker Infineon says it has developed the world's first 12-inch gallium nitride (GaN) wafer technology as it looks to ca ...