Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

Three laser experiments today: laser-induced electroless copper plating, laser-assisted electroplating on stainless steel, ...

Data diodes are a humble-looking piece of tech, but they are much more important than their appearance might convey. Slowly ...

In 2023, about 4.4% (176 terawatt-hours) of total energy consumption in the United States was by data centers that are essential for processing large quantities of information. Of that 176 TWh, ...

A pair of half-bridge drivers from STMicroelectronics help designers deliver improved efficiency, power density, and ...

This story is from the next print edition of MIT Technology Review, which explores power—who has it, and who wants it. It’s ...

Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...

GaN-on-SiC epitaxial wafer company SweGaN has appointed Pontus de Laval, senior advisor at one of SweGaN’s major shareholders ...

Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...