Considering the special effect of patterned r-plane sapphire substrate for the growth of nonpolar GaN, a model is proposed by introducing a modified Wulff- Joccodine method to identify the topography ...

This study focuses on the simulation of wet etching of sapphire at different concentrations and temperatures. We use the Evolutionary Kinetic Monte Carlo (E-KMC) method, which combines (i) a removal ...

Recently, the two-dimensional (2D) elemental material tellurium (Te) has drawn considerable attention, since it possesses high transport properties, wide broadband absorption, excellent thermoelectric ...

By comparing the etching morphology of the craters ablated by femtosecond laser with wavelengths of 400 and 800 nm, we observe that due to the lower threshold fluence and steeper crater profile, the ...

Here are five common myths about getting devices wet: Myth 1: My device turned back on! It’s fine. While it’s a relief to see your technology rise from the dead, ...