Anisotropic etching and bulk micromachining of silicon are critical processes in the fabrication of micro-electromechanical systems (MEMS) and other microstructures. These techniques allow for the ...

Isotropic vs. anisotropic etching. Most wet etching methods are isotropic to some degree, which can lead to problems like undercutting. With the notable exception of scratching out traces with an ...

Isotropic etching is useful for creating curved or sloped nanostructures, such as nanolenses or tapered nanowires. Anisotropic wet etching exhibits directional dependence, with faster etching in ...

At the top, we see two types of ALE: (left) isotropic etching, which removes material evenly in all directions, and (right) anisotropic etching, which removes material in a specific direction. The ...

This room also has the following resources: The Trion ICP/RIE Etch PHTII-4301 (TRION) is a reactive ion etcher with the addition of a inductively coupled plasma to achieve a high density plasma for ...

Reactive Ion Etch (RIE) is a physical etch process. A rich plasma has been made just above the wafer, and the ions are expedited toward the surface to generate a highly powerful anisotropic etch.

Recent studies have demonstrated that using anisotropic etching of silicon can create gratings with sharp, atomically smooth facets, leading to a remarkable increase in peak order efficiency and a ...

To obtain anisotropic profiles, the DSiE technique or the Deep Reactive Ion Etching (DRIE) repeatedly integrates isotropic silicon etching and passivation steps. With the help of a high-density plasma ...