During the fabrication of 3D NAND replacement gate memory devices, one of the key process modules involves the formation of the metal gates and wordlines in the memory cell. The process starts when a ...

Crossbar estimates that using 20nm 3D NAND process will produce an equivalent lithography of 5nm planar NAND, thereby allowing Samsung to breach the scaling limit. ...

On Monday, memory and storage vendor Micron announced that its new 176-layer 3D NAND (the storage medium underlying most SSDs) process is in production and has begun shipping to customers.

Coventor’s powerful SEMulator3D semiconductor process modeling platform offers a wide range of technology development capabilities for the development of cutting edge 3D NAND Flash Technology. 3D NAND ...

SACLAY, France, Nov. 9, 2021 /PRNewswire/ -- aveni SA, a leading provider of metallization technologies for advanced logic and 3D NAND memory devices, today announced that it has secured a patent ...

MILPITAS, Calif., Dec. 04, 2017 (GLOBE NEWSWIRE) -- Nanometrics Incorporated (NASDAQ:NANO), a leading provider of advanced process control systems, today announced that its IMPULSE ® + integrated ...

According to Samsung, its 40nm 3D NAND produces an equivalent lithography of a 10nm planar NAND. As explained by Crossbar, a 3D NAND module fabricated using a regular 20nm process would produce an ...

2D NAND is reaching its scaling limits with 3D NAND its anointed successor. In the 2D NAND era, the underlying process technology (with a few exceptions) is essentially the same amongst all the ...

Although still in the early stage of R&D, 3D FeFETs are expected to present some notable advantages compared to 3D NAND technology. They are simpler to process, consume less power, and can potentially ...

The cells were designed as a modified 3D NAND process, with NEO hoping that existing 3D NAND manufacturing facilities can be quickly and easily upgraded to fabricate the new designs.