为了改进数据存储，研究人员正在完善三维 NAND 闪存，这种闪存将单元堆叠起来，以最大限度地利用空间。研究人员发现了一种更快、更高效的方法，可利用先进的等离子体工艺在 3D NAND 闪存中蚀刻深孔。

To store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be ...

To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...

在科技领域的最新进展中，3D NAND闪存技术因其存储单元堆叠的独特设计而备受瞩目，这一设计策略不仅显著提升了存储密度与容量，还有效降低了生产成本。近日，一项创新蚀刻工艺的问世，为3D NAND闪存技术的进一步突破带来了希望。 这项新工艺由Lam ...

The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a ...

Yangtze Memory Technologies Co. (YMTC) has pushed forward with a 3D NAND chip that includes 294 total layers, out of which ...

NAND Flash is a type of non-volatile memory technology that has revolutionized data storage in the digital age. It is a form of flash memory, which means it can be electrically erased and reprogrammed ...

Samsung Electronics is shifting its focus considerably toward cost-effective and highly advanced three-dimensional (3D) NAND flash memory chips.