资讯

新浪网1 年
TechInsights：三星领跑3D NAND堆叠效率 长存美光紧随其后
研究认为，在多代3d nand产品中，三星始终以最高的垂直单元效率领跑行业。 techinsights近期分析了从sk海力士2tb ssd pc811 hfs002tem9x152n（器件：h25t3tdg8c ...
腾讯网1 年
3D NAND原厂技术比拼，哪家垂直单元效率更高？_腾讯新闻
平面 nand 在每个节点上都减小了单元尺寸，而 3d nand 则采用了更宽松的工艺，大约在 30nm 到 50nm 之间。3d nand 内存容量的扩展主要是通过添加垂直层 ...
腾讯网2 年
全球首款 3D X-DRAM，NAND Flash奔向300层 - 腾讯网
4日讯，初创公司NEO Semiconductor表示，其3D X-DRAM技术可以生产230层的128Gbit DRAM芯片——是当前DRAM密度的八倍。NEO专注于半导体存储器并开发了X-NAND技术 ...
新浪网2 年
SSD价格狂跌不止：厂商开始慌了 美光/铠侠减产NAND芯片|NAND|3D|美光 ...
此前，美光也放慢了量产232层nand芯片的步伐。 统计机构TrendForce的最新报告指出，3D TLC/QLC芯片在本季度的协议价下滑了30~35%，第四季度预计还会下滑 ...
快科技6 年
长江存储预告全新国产3D闪存：前所未有高性能-长江存储,闪存,NAND ...
作为3D NAND闪存产业的新晋者，长江存储今年将第一次参加行业权威的闪存峰会(Flash Memory Summit)，并首次公开披露即将发布的突破性技术Xtacking。 北京 ...
快科技10 年
当TLC遇见3D V-NAND，三星850 EVO 250GB固态硬盘评测
三星在今年7月发布的850Pro系列SSD上首次使用了3D V-NAND的MLC闪存，其实当时就知道三星迟早会出用3D V-NAND TLC的850 EVO，等了5个月后它终于来了。 三星 ...
Semiconductor Engineering2 年
3D NAND Virtual Process Troubleshooting And Investigation - Semiconductor Engineering
During the fabrication of 3D NAND replacement gate memory devices, one of the key process modules involves the formation of the metal gates and wordlines in the memory cell. The process starts when a ...
Semiconductor Engineering3 年
Micron B47R 3D CTF CuA NAND Die, World's First 176L (195T) - Semiconductor Engineering
Micron’s 176L 3D NAND is the world’s first 176L 3D NAND Flash memory. TechInsights just found the 512Gb 176L die (B47R die markings) and quickly viewed its process, structure, and die design. Micron ...
Ars Technica4 年
Micron announces new 3D NAND process—denser, faster, less expensive
On Monday, memory and storage vendor Micron announced that its new 176-layer 3D NAND (the storage medium underlying most SSDs) process is in production and has begun shipping to customers.
The Motley Fool11 年
3D NAND: Are You Ready for a Boom? - The Motley Fool
Crossbar estimates that using 20nm 3D NAND process will produce an equivalent lithography of 5nm planar NAND, thereby allowing Samsung to breach the scaling limit. ...
Computerworld11 年
RRAM vs. 3D NAND flash, and the winner is…us - Computerworld
NAND flash process technology has been advancing every 12 months or so. ... The first generation of 3D NAND, 24-layers deep, comes on heels of sub-20nm node 2D NAND, ...