Abstract: Channel prediction tools using ray-tracing scheme can be used to get information of communication channel instead of channel measurement. Three dimensional (3D) ray-tracing technique is ...

Abstract: The 3D vertical ferroelectric tunneling junction (FTJ) of bilayer antiferroelectric (AFE) $\mathrm {Hf}_{1-x}Zr_{x}\text{O}$ 2(HZO) and Al2O3 has been demonstrated for NAND-compatible ...

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† Key Laboratory of Pesticide & Chemical Biology of Ministry of Education, College of Chemistry, Central China Normal University, Wuhan, 430079, P. R. China ‡ Key Laboratory of Catalysis and Materials ...

1980年代初入市场的NAND Flash 只有4Mb容量，发展至今单芯片可达2Tb，Flash 存储技术已发展40 余年由2D NAND 向3D NAND 技术路径演进。 半导体存储也称为存储芯片，根据数据存储原理的不同，半导体存储器可以分为随机存储器（RAM）和只读存储器（ROM）。 RAM是与CPU ...