Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Teledyne HiRel Semiconductors announces the availability of its latest rad-tolerant wideband 50 GHz RF switch, model ...

Abstract: Insulated-gate field-effect transistors using Schottky barrier contacts for the source and drain have been studied. At room temperature, the device characteristics are Comparable to ...

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

Abstract: Polysilicon is extensively employed as a material for emitters in vertical bipolar junction transistors ... current gain (beta). To enhance the electrical properties of polysilicon emitter ...