Forvia Hella in Germany is to use 1200V silicon carbide (SiC ... “Together with Infineon, we will continue to offer sustainable and innovative products and comprehensive services that exceed our ...

在该衬底上生长的6英寸SiC外延层实现了高达99.2%的无致命缺陷良率。基于此6英寸外延层制造的1200V、20mΩ的SiC MOSFET器件展示了超过70%的良率（在I DSS <2µA，在1200V条件下测试），其性能和可靠性可同最先进的商用器件相媲美。电路鲁棒性测试显示，在超过250A ...

NCP51705SMDGEVB，NCP51705 SiC 驱动器微型 SMD EVB 的评估板。 EVB 采用四层 PCB 设计，包括 NCP51705 驱动器和所有必要的驱动电路。 EVB 还包括一个板载数字隔离器，并且能够在 TO-247 高压封装中焊接任何 MOSFET 或 SiC MOSFET。 EVB 不包括功率级，并且从不专用于任何特定拓扑的 ...

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(NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high ...

Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package.

These connectors offer a reliable and field-tested solution for mid-voltage connectivity requirements within the transportation industry, using the same package size and housing as proven MX150 ...