通过表面活化键合技术和离子注入剥离技术，将高质量SiC薄层键合转移到低质量单晶SiC衬底上，实现了低质量单晶SiC衬底有效 ...

Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to simplify switching behaviours ...

SemiQ Inc, a developer of SiC devices has announced a family of 1700 V SiC MOSFETs designed to meet the needs of ...

Based on a new manufacturing process, the split-gate MOSFETs developed by Renesas show significant improvements in power handling.

SiC MOSFET属于常闭器件，兼具许多系统中所需的低电阻和可控性。K88ednc 热封装 SiC功率模块可实现高级别的系统优化，这很难通过并联分立MOSFET来实现。Microchip的mSiC™模块具有多种配置以及电压 ...

与Si MOSFET 相比，SiC MOSFET 在输出电容中存储的能量 ... 650V M3S EliteSiC MOSFET 的RDS(ON)低于相同封装的超级结MOSFET，这提升了LLC拓扑的系统能效，同时 ...

重要的是，由于与封装、模块、电路和应用相关 ... 例如，对于 SiC 功率器件，专利分析已分为二极管、MOSFET 和其他 SiC 器件。此外，SiC MOSFET 专利 ...

Silicon Carbide (SiC) MOSFETs are increasingly used in high-power applications due to their superior performance compared to traditional silicon devices. However, when these devices are connected ...

专为保护SiC MOSFET栅极驱动器而设计，这些驱动器需要不同的负电压和正电压额定值； 设计紧凑：该系列产品采用DO-214AA（SMB J-Bend）封装，非常适合空间受限的汽车设计； 车规级品质：通过AEC ...