2. Fast Write Technology with Simultaneous Write Bit Number Optimization and Shortened Mode Transition Time Following the high-speed write technologies for embedded STT-MRAM announced in December 2021 ...

Abstract: We experimentally investigate the writing reliability of STT-MRAM in the presence of magnetic fields oriented at different angles. It is established that ...

The spintronics market is projected to reach USD 98.65 billion by 2035, driven by MRAM use and advances in spin-based ...

Abstract: Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile memory (NVM) technology, which has compelling advantages in scalability, speed, ...

近年来，磁随机存储器（MRAM）因其优异性能获得工业界和学术界的高度关注。但受制于物理尺寸难以微缩到DRAM/NAND级别、写入速度无法达到SRAM（小于1纳秒，即十亿分之一秒）级别等关键技术瓶颈，MRAM在主流存储器市场上处于容量无法匹配DRAM/ ...

瑞萨：推进STT-MRAM技术 瑞萨也是eMRAM技术的主要推进者。 据悉，瑞萨的MRAM基于自主研发，类别上属于STT-MRAM（自旋注入式MRAM）。 2022年6月，瑞萨推出 ...

嵌入式人工智能和智能边缘设备的兴起进一步加速了这一趋势。边缘计算系统越来越被期望能够在本地处理数据、降低通信延迟并做出实时决策。这些系统需要快速、节能且非易失性的内存。传统的嵌入式内存解决方案往往在一个或多个方面存在不足。MRAM 和 ReRAM ...

Everspin Technologies, Inc. manufactures and sells magnetoresistive random access memory (MRAM) technologies in the United States, Japan, Hong Kong, Germany, Singapore, China, Canada, and ...