Toshiba has developed a SiC MOSFET that arranges embedded Schottky barrier diodes in a check pattern to achieve both low on-resistance and high reliability. The company reports that the design reduces ...

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two ...

The thing is, the typical direct voltage on a “parasitic” Si diode is 0.3V to 0.5V higher than the Schottky’s one ... caution should be observed since some SiC MOSFETS can be unreliable [1]. Note: ...

The FMCA series of silicon-carbide (SiC) Schottky barrier diodes ... thanks to a high-speed switching SiC-MOSFET, which delivers low resistance, the diodes eliminate the thermal runway, leading ...

SemiQ is aiming at solar inverters with 1,200V SiC mosfets that are avalanche tested to 800mJ, some co-packaged with silicon carbide Schottky diodes – all have intrinsic reverse diodes. There are four ...

An SiC Schottky diode has about 40 times lower ... which leads to the requirement of larger die devices for both MOSFET and boost diode in order to meet efficiency and thermal specifications.

has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes, designed for high-frequency ...

The high-performance SiC diodes are also notable for their lowest reverse leakage ... particularly in comparison to silicon Schottky devices. This reduction in heat dissipation also lowers cooling ...