Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A, and 12A, the ...

The use of an anti-parallel Schottky barrier diode (SBD) can improve the performance and reliability of silicon carbide MOSFETs in power conversion applications. In this article, we will showcase ...

With features like a low forward voltage drop, minimal capacitive charge, and high-temperature operation, these diodes are ideal for power conversion in AC/DC PFC, photovoltaic systems, and more.

Infineon diode enables higher efficiency and design simplification in DC link systems up to 1500VDC To meet the needs of industrial applications transitioning to higher power levels using increased DC ...

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two ...

Abstract: A novel Schottky barrier diode (SBD) integrated Silicon carbide (SiC) asymmetric MOSFET structure is proposed in this paper. The proposed SiC MOSFET allows the integration of a Schottky ...

power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon technology. Due to their generally low forward voltage drop and lack of a reverse ...