SemiQ is aiming at solar inverters with 1,200V SiC mosfets that are avalanche tested to 800mJ, some co-packaged with silicon carbide Schottky diodes – all have intrinsic reverse diodes. There are four ...

Abstract: In Silicon Carbide based voltage source converters (VSCs), pairing Schottky barrier diodes (SBDs) presents trade-offs ... A three-phase VSC with 1.2 kV MOSFETs and four sets of 1.2 kV SBDs ...

The COPACK MOSFETs with Schottky barrier diode provides exceptional switching losses at high junction temperature due to the low turn on switching losses. SemiQ is targeting the SiC MOSFET modules at ...

QSiC™ 1200V COPACK SiC MOSFET Modules are designed for use in solar inverters ... rounding out a comprehensive family designed for demanding power environments. These co-packaged MOSFETs incorporate a ...

Toshiba's new gate driver photocoupler has built-in active Miller clamp to save space and cost Toshiba Electronics Europe has launched a highly integrated gate driver photocoupler suitable for driving ...

Diodes Incorporated’s DIOD share price has surged by 10.22%, which has investors questioning if this is right time to sell.

The new products are the first 3rd generation SiC MOSFETs to use the small surface-mount DFN8x8 package, which reduces volume by more than 90% compared to lead-inserted packages, such as TO-247 and TO ...

四款新器件助力提升工业设备的效率和功率密度 东芝电子元件及存储装置株式会社今日宣布，推出四款最新650V碳化硅（SiC）MOSFET——“TW031V65C”、“TW054V65C”、“TW092V65C”和“TW123V65C”。这些器件配备其最新的[1]第3代SiC MOSFET技术，并采用紧凑型DFN8×8封装 ...