The new products are the first 3rd generation SiC MOSFETs to use the small surface-mount DFN8x8 package, which reduces volume by more than 90% compared to lead-inserted packages, such as TO-247 and TO ...

四款新器件助力提升工业设备的效率和功率密度 东芝电子元件及存储装置株式会社今日宣布，推出四款最新650V碳化硅（SiC）MOSFET——“TW031V65C”、“TW054V65C”、“TW092V65C”和“TW123V65C”。这些器件配备其最新的[1]第3代SiC MOSFET技术，并采用紧凑型DFN8×8封装 ...

Toshiba Electronics Europe has announced volume shipments of its 3rd generation, 650V SiC MOSFETs in the compact DFN8x8 package for industrial equipment. Devices include the TW031V65C, TW054V65C, ...

KAWASAKI, Japan, May 20 (Bernama) -- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched four 650V silicon carbide (SiC) MOSFETs, equipped with its latest[1] 3rd generation SiC ...

Due to the absence of the p-Ga2O3, the performance of the power devices based on Ga2O3 was largely limited. To get better performance, many Ga2O3 Schottky Barrier Diodes (SBD) with edge termination ...

MOSFET, and the FFSP0665B-F085 SiC diode. Thanks to the high blocking voltage capabilities and ultra-low gate charge (34 nC) value of the SiC FET, the switching losses are significantly reduced, and ...