Toshiba has developed a SiC MOSFET that arranges embedded Schottky barrier diodes in a check pattern to achieve both low on-resistance and high reliability. The company reports that the design reduces ...

SemiQ is aiming at solar inverters with 1,200V SiC mosfets that are avalanche tested to 800mJ, some co-packaged with silicon carbide Schottky diodes – all have intrinsic reverse diodes. There are four ...

Diodes has expanded its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Diodes unveils new SiC Schottky diodes ...

The high-performance SiC diodes are also notable for their lowest reverse leakage (I R) in the industry, at 20µA (max.). This minimizes heat dissipation and conduction losses, improving system ...

The LSIC2SD065CxxA and LSIC2SD065AxxA Series SiC Schottky Diodes are available with a choice of current ratings (6A, 8A, 10A, 16A or 20A). They offer power electronics system designers a variety of ...

An SiC Schottky diode has about 40 times lower ... which leads to the requirement of larger die devices for both MOSFET and boost diode in order to meet efficiency and thermal specifications.

The higher turn-on voltage reduces efficiency slightly versus an external SiC Schottky diode, but the body diode has a much lower reverse recovery charge than a silicon MOSFET’s body diode.

The new dual SiC MOSFET module (MG250YD2YMS3) has a VDSS rating of 2200V and is capable of supporting a continuous drain current (ID) of 250A, with 500A in pulsed operation (IDP). Isolation (Visol) is ...