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Abstract: Degradation of p-MOSFET parameters during negative-bias temperature instability (NBTI) stress is studied for different nitridation conditions of the silicon oxynitride (SiON) gate dielectric ...
Abstract: This letter presents a fully integrated CMOS envelope-tracking transmitter with an on-chip common-gate voltage modulation linearizer that achieves an average output power of 26/23.5 dBm with ...
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