Static and dynamic behaviors as well as effect of the oxide layer thickness are investigated with a view to suspended-gate single-electron transistor applications. The proposed structure successfully ...

Abstract: A new monolithic integrated power device, the MOS-gate transistor (MGT), which consists of a bipolar transistor for an output stage and two MOSFET's for a driver stage, has been investigated ...

SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-Si, Gyeonggi-do 16419, Republic of Korea ...