The conventional TO-247-3 packages with single-sided cooling limit the thermal and electrical performances of discrete SiC MOSFET devices. In this paper, a double-sided cooling press-pack (PP) ...

The discrete MOSFET world started with planar devices. The devices are made entirely on a planar process (Fig. 1) with diffused P and N wells, oxide grown on the surface, and surface metallization ...

Nexperia is introducing new MOSFETs at APEC to expand its line of discrete switching solutions for diverse applications in different markets. The version contains 100 V application-specific MOSFETs ...

In view of the problem that the package parasitic inductance of the TO-247-3 wire-bonded discrete SiC MOSFET seriously affects its high-frequency switching characteristics, a press-pack package ...

By using a load switch instead of a discrete MOSFET circuit, the solution size can be reduced to 4 mm 2 or smaller. This results in a 3.5X improvement in power density.

Infineon Technologies enters high volume production of a comprehensive portfolio of 1200 V CoolSiC MOSFET devices. They are rated from 30 mΩ to 350 mΩ and implemented into TO247-3 and TO247-4 housings ...

The integrated load switch of Figure 4, from schematic standpoint and therefore basic-function standpoint, is essentially the same as the discrete load switch. The main switch is a P-channel planar ...