资讯

A power module including seven SiC-mosfet bare dies with low stray inductance is designed for ZVS-SVM inverter instead of the existing seven discrete TO-247 package SiC-mosfets to reduce the voltage ...
A non-segmented PSpice model of silicon carbide metal-oxide semiconductor field effect transistor (SiC mosfet) with temperature-dependent parameters is proposed in this paper, which can improve the ...