SiCPAK power modules from Navitas use advanced epoxy-resin potting to achieve 5× lower thermal resistance shift for extended ...

Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centres, EVs, motor drives, and ...

The following figures are datasheet plots of the Vishay SiE848DF that is an N-Channel, 30 V trench power MOSFET housed in a ... lair in the Pacific Northwet[sic]. AndyT's engineering blog ...

Abstract: Developing an effective methodology to enhance the uniformity of short-circuit withstand time (SCWT) in silicon carbide (SiC) MOSFETs is crucial for ensuring device reliability and ...

国产SiC碳化硅MOSFET在充电桩和车载OBC（车载充电机）等领域出现栅氧可靠性问题后，行业面临严峻挑战。面对国产SiC碳化硅MOSFET厂家栅氧可靠性的爆雷后的危机出来之后，国产SiC碳化硅MOSFET厂家是主动检讨改进还是百般抵赖甚至报告作假，揭示了国产SiC碳化硅 ...

近日，清纯半导体和VBsemi（微碧半导体）分别推出了其第三代碳化硅（SiC）MOSFET产品平台，标志着功率半导体技术在快充效率、高功率密度应用等领域取得了重大突破。 01 清纯半导体推出第3代SiC MOSFET产品平台 4月21日，清纯半导体官微宣布，推出第3代碳化硅 ...

Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation leadership, GeneSiC™ technology leads on ...

Navitas Semiconductor is set to unveil a series of cutting-edge GaN and SiC technology advancements at PCIM Europe 2025, taking place from May 6–8 in Nuremberg, Germany. As the premier trade show for ...