图腾柱 PFC 级基于 MOSFET，通过移除体积大且损耗高的桥式整流器，提高了交流电源的能效和功率密度。JBjednc 然而，为了实现超大规模数据中心公司要求的 97.5% 或更高的能效，图腾柱 PFC 需使用基于“宽禁带”半导体材料（如碳化硅 (SiC)）的 MOSFET。如今 ...

Abstract: A simple and physically insightful model for predicting the switching transients of SiC MOSFETs and GaN HEMTs in power electronic half-bridges is proposed in this research. The proposed ...

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For this function, the MOSFETs must withstand the thermal stress of repeated power cycling, with failure leading to test disruption and inaccurate data. Conversion efficiency is also essential in ...

本文详细介绍了SiC MOSFET的动态特性。包括阈值电压特性、开通和关断特性以及体二极管的反向恢复特性。此外，还应注意测试波形的准确性。

We appreciate your support and look forward to continuing to provide valuable insights for our audience. The SiC MOSFET market is expanding rapidly, driven by the need for high-efficiency power ...

这项专利的申请日期为2025年2月，标志着旭矽半导体在功率半导体领域的又一次重要突破。 SIC MOSFET器件：功率半导体的未来方向SIC MOSFET器件因其卓越的耐压性能和低开关损耗，被认为是下一代功率半导体的核心技术。旭矽半导体的这项专利通过创新的高K材料 ...

At the “Wide-Bandgap Developer Forum” event organized by Infineon Technologies ... The grid frequency is 50 Hz and the SiC MOSFETs are switched at 6 kHz. It is also assumed that the maximum junction ...