and better thermal performance across various applications. With over twenty years of expertise in silicon carbide development, Infineon adopted a trench-based design to capitalize on the low RDS(on) ...

* Models provided by INFINEON are not warranted by INFINEON as * ...

has introduced a new family of 1700 V SiC MOSFETs designed to enhance medium-voltage ... offering a power dissipation of 652 W and the half-bridge module providing up to 2113 W of dissipation, ...

SiC MOSFET: Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor, a type of transistor that offers high efficiency and thermal performance. Current Sharing: The distribution of ...

Abstract: Series-connection of silicon carbide (SiC)-MOSFETs has significant advantages in simplifying the topology and control of high-voltage converters. However, the challenges of high isolation ...

New SiC platform supports long-term roadmaps for high-performance, application-optimised products Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to ...

SemiQ has unveiled a family of 1700 V SiC MOSFETs that have been designed to meet the needs of medium-voltage high ... The TO-247-4L package has a junction to case thermal resistance of 0.27C per watt ...