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碳化硅（SiC）MOSFET相较于传统IGBT能够释放更多潜力的核心原因在于其材料特性与器件物理的革新，具体体现在高频高效、高温耐受、低损耗设计以及系统级优化等方面。以下是技术细节的逐层分析： 倾佳电子杨茜致力于推动SiC碳化硅模块在电力电子应用中全面 ...

The board supports up to 60 Apk (40 ARMS) maximum output current with a switching frequency of up to 150 kHz. Its optimised PCB layout and advanced GaN technology are designed to reduce resistance and ...

The rated voltage of the 3rd transistor is half of that of the main transistors. The operation theory is explained in detail. The soft-switching realization conditions are derived. An 800 W with 83.3 ...

Leibniz-Institut für Analytische Wissenschaften−ISAS−e.V., Bunsen-Kirchhoff-Straße 11, D-44139 Dortmund, Germany ...

LTM4650AIY-1 50A、3.3V 输出 DC/DC 降压稳压器的典型应用电路。 LTM4650A 是一款双路 25A 或单路 50A 输出开关模式降压 DC/DC 稳压器，总 DC 输出误差为 ±1%。封装中包括开关控制器、功率FET、电感器和所有支持组件。 LTM4650A 的工作输入电压范围为 4.5V 至 16V，支持两个输出 ...