The GaN transistors are fabricated at Infineon’s foundry. “It is important to note that Infineon owns the fab in Europe that manufactures the radiation-hardened wafers, and we are not dependent on ...

Keying in on the in-house manufacturing of the device, Darcy added, “It is important to note that Infineon owns the fab in Europe that manufactures the radiation wafers, and we are not dependent on ...

Infineon Technologies AG announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology.

In July 2023, Renesas entered into a SiC wafer supply agreement with Wolfspeed, in which it provided a deposit of $2 billion.

It is the first GaN transistor Infineon has made entirely in its own foundry to hit that level. These GaN high electron mobility transistors (HEMTs) are aimed at on-orbit vehicles, manned missions ...

Range includes one of the first DLA JANS certified GaN devices Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based on its ...

Infineon Technologies has announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, based on its CoolGan technology. Infineon unveils new range of GaN transistors ...

highlighted by Infineon’s acquisition of GaN Systems and Renesas’s acquisition of Transphorm. Power GaN HEMTs feature a lateral structure with a thin GaN layer grown on a silicon substrate. This ...

Infineon’s radiation-hardened GaN transistors are specifically designed for mission-critical applications in on-orbit satellites, crewed space missions, and deep-space exploration probes. Infineon ...

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its CoolGaN technology. The company said the in-house manufactured transistors ...