This highlights the need for tailored approaches to ion implantation based on the specific characteristics of the GaN structure being used. Ion Implantation: A process used to introduce impurities ...

One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

Device fabrication began with the P-GaN cap layer etch and mesa isolation. The ohmic contacts were then formed via magnetron sputtering and annealing in N 2 atmosphere. After depositing SiO 2 ...

In the discriminator, we removed two DH modules and (4) the proposed UCT-GAN model. For each variant, we compute the mean value of MAE, RMSE, R2, and DTW. The results are shown in Table 3. Removing ...

However, over the past year, I have undertaken extensive testing, evaluating close to 300 GaN (gallium nitride) chargers of varying sizes, power outputs, and manufacturers. Also: This portable ...

State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, People’s Republic of China State Key Laboratory of High Power Semiconductor ...

Direct electrical access to the bottom electrode through vias is formed in the proposed switchable BAW resonators. Compared to prior GaN BAW devices, this via-connected BAW device structure shortens ...

GaN is a compound that’s made up of gallium and nitrogen and its Wurtzite crystal structure is both very strong and has a high melting point, which makes it suitable for semiconductor base materials ...

GaN power semiconductors are on a tremendous growth trajectory. GaN is on its way to reaching more tipping points in its adoption in more industries. Consumer chargers and adapters have been the ...

Rosenblatt Securities reiterated a Buy rating on shares of Navitas Semiconductor (NASDAQ: NVTS), with a steady price target of $5.00. The firm's analysts highlighted the expansion of Dell's use of ...