today announced an important development and process milestone with the successful light-up of the first-ever 300mm blue GaN-on-Silicon micro-LED array wafer. This accomplishment marks important ...

These parameters are very important when bonding CMOS wafers ... the typical wafer dimension for GaN-on-sapphire – has a bigger business impact for micro LEDs than in other parts of the LED industry, ...

To address the wafer size mismatch and to tackle the yield challenge in micro LED production, ALLOS has applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 ...

a CMP process that using conventional SiO 2 slurry with the addition of diamond nanoparticles is carried out on the GaN (LED)-on-Si wafer prior to the bonding to the Si-CMOS wafer. The second issue is ...

Wafer level bonding poses significant technical challenges and had not previously been achieved between a GaN ... connect the microLED pixels to the controlling backplane. The JDC backplane provides ...

Propel MOCVD system delivers crack-free, meltback-free wafers with wavelength uniformity of less than one nanometer Veeco Instruments has completed a strategic initiative with Allos Semiconductors to ...

1, a vertical LED device is designed from a GaN structure grown by MOCVD on a 6” silicon wafer. A highly reflective (typically 95% reflectance) contact is deposited and annealed, followed by several ...