Navitas Semiconductor partners with Nvidia for innovative HVDC data centers, leveraging GaN and SiC tech. Read why I am ...

Infineon Technologies has launched the first in a new family of radiation-hardened ... WBG semiconductors, such as those based on silicon carbide (SiC) and GaN offer many advantages over traditional ...

Pioneering studies on SiC and GaN materials laid the foundation for commercial devices capable ... As the GaN market expands, industry consolidation is underway, highlighted by Infineon’s acquisition ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based on its CoolGan technology.

Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...

Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications. Infineon Technologies AG has launched the first of a new family of ...

It is the first GaN transistor Infineon has made entirely in its own foundry to hit that level. These GaN high electron mobility transistors (HEMTs) are aimed at on-orbit vehicles, manned missions ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry applications, and Infineon Technologies just upped its GaN game with the ...

To support the expected demand, Infineon is expanding its SiC production capabilities. The company’s Kulim site in Malaysia is set to become the world’s most competitive 200-mm SiC fab. Coupled with ...

Attendees will learn about the evolving technology trends shaping the power landscape, as well as the tools and resources available from Infineon that are designed to simplify the implementation of ...

Infineon Technologies has announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, based on its CoolGan technology. Infineon unveils new range of GaN transistors ...